rus
Issue #5/2026
A. A. Afonyushkin, A. S. Krovyakov, V. S. Bondarev, D. M. Cherkashina, V. V. Zhdanov
Laser Annealing of Silicon Carbide for The Formation of Ni/SiC Ohmic Contacts
Laser Annealing of Silicon Carbide for The Formation of Ni/SiC Ohmic Contacts
DOI: 10.22184/1993-7296.FRos.2026.20.5.342.349
The study investigates laser annealing of silicon carbide for the formation of Ni/SiC ohmic contacts. The aim of the work was to confirm the feasibility of forming ohmic contacts by laser annealing and to identify ranges of processing parameters that provide linear and symmetric current-voltage (I–V) characteristics and low specific contact resistivity. Contact structures with different intercontact spacings were used for experimental verification. The results were evaluated by analyzing and classifying the I–V characteristics, followed by application of the transmission line method (TLM) for quantitative determination of the contact parameters. The experimental results showed that contacts exhibiting ohmic behavior are formed not within a single processing window, but within several distinct ranges of laser-processing parameters. The identified processing ranges can serve as a basis for further optimization of the process with consideration of the properties of the starting material, metallization, and contact geometry. The developed software and laser system provide accurate positioning and reproducible definition of the geometry of the treated areas, enabling efficient processing of series of test structures and providing a basis for further development of an industrial laser annealing system.
Subscribe to the journal Photonics Russia to read the full article.
The study investigates laser annealing of silicon carbide for the formation of Ni/SiC ohmic contacts. The aim of the work was to confirm the feasibility of forming ohmic contacts by laser annealing and to identify ranges of processing parameters that provide linear and symmetric current-voltage (I–V) characteristics and low specific contact resistivity. Contact structures with different intercontact spacings were used for experimental verification. The results were evaluated by analyzing and classifying the I–V characteristics, followed by application of the transmission line method (TLM) for quantitative determination of the contact parameters. The experimental results showed that contacts exhibiting ohmic behavior are formed not within a single processing window, but within several distinct ranges of laser-processing parameters. The identified processing ranges can serve as a basis for further optimization of the process with consideration of the properties of the starting material, metallization, and contact geometry. The developed software and laser system provide accurate positioning and reproducible definition of the geometry of the treated areas, enabling efficient processing of series of test structures and providing a basis for further development of an industrial laser annealing system.
Subscribe to the journal Photonics Russia to read the full article.
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