rus
Issue #6/2025
M. S. Kovalev, N. G. Stsepuro, E. V. Ulturgasheva, S. I. Kudryashov
Single-pulse Laser-Induced Al Transfer Onto the Si Wafer for Ohmic Contact Development
Single-pulse Laser-Induced Al Transfer Onto the Si Wafer for Ohmic Contact Development
DOI: 10.22184/1993-7296.FRos.2025.19.6.466.477
Bauman Moscow State Technical University (National Research University), Moscow, Russia
The article examines the aluminum contacts on silicon wafers developed by the laser-induced forward transfer. It is determined that a single-pulse regime with an energy density of 15 J/cm2 leads to an aluminum concentration of 18.6% and a minimum contact resistance of 439 ± 4 Ohm. The method simplifies the contact generation process and eliminates the need for complex cleaning, making it promising for future silicon-based electronic applications.
Subscribe to the journal Photonics Russia to read the full article.
Bauman Moscow State Technical University (National Research University), Moscow, Russia
The article examines the aluminum contacts on silicon wafers developed by the laser-induced forward transfer. It is determined that a single-pulse regime with an energy density of 15 J/cm2 leads to an aluminum concentration of 18.6% and a minimum contact resistance of 439 ± 4 Ohm. The method simplifies the contact generation process and eliminates the need for complex cleaning, making it promising for future silicon-based electronic applications.
Subscribe to the journal Photonics Russia to read the full article.
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