DOI: 10.22184/1993-7296.FRos.2025.19.1.62.70

In this paper, the plasma-­enhanced chemical vapor deposition (PECVD) method was used for the first time to obtain InGaZnO (IGZO) thin films with various stoichiometry, morphology, and phase composition. The films were synthesized using the setup described in detail in [1–5]. The precursors were elementary high-purity In, Ga, and Zn, the carrier gases were Ar and H2, and a mixture of (Ar-­H2-O2) was used as a plasma-­forming gas. Deposition was performed on the high-pure quartz glass substrates. The composition of the samples was determined by the energy-­dispersive X-ray analysis. The obtained samples were also examined by the scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical profilometry methods. The electrical properties of the obtained films, such as the type, mobility, and carrier concentration, were established by the Hall effect measurements.