Modern technology of forming heterostructures based on solid solutions of semiconductor nitrides, allows obtaining high-efficiency light-emitting diodes. Aluminum and gallium nitrides as well as solid solutions based on them are promising materials for optoelectronic devices in violet spectral region. Optical properties of a multilayer heterostructure based on wide-gap AlN / GaN semiconductors are studied. Modeling carried out using the mathematical software package MathCad. The results are of interest for industrial forming integrated structures emitting at several wavelengths. The creation of such a source allows you to increase the differential quantum efficiency of the LED in the UV region of the spectrum. Developed the structure of source with radiation wavelengths near 278 and 317 nm.

DOI: 10.22184/1993-7296.2018.12.7.680.683


Разработка: студия Green Art