rus
Issue #4/2022
A. A. Nikitin, K. O. Voropaev, A. A. Ershov, I. A. Ryabсev, A. V. Kondrashov, M. V. Parfenov, A. A. Semenov, A. V. Shamrai, E. I. Terukov, A. V. Petrov, A. B. Ustinov
Study of Silicon Nitride Film Deposition Technology for Application in the Photonic Integrated Circuits
Study of Silicon Nitride Film Deposition Technology for Application in the Photonic Integrated Circuits
DOI: 10.22184/1993-7296.FRos.2022.16.4.296.304
The article is devoted to the production technology of optical micro-waveguides made of silicon nitride. The silicon substrates with a silicon oxide sublayer were used to produce the waveguide structures. The silicon nitride films were deposited on the silicon oxide surface by plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition. The silicon nitride film thickness varied from 710 to 730 nm, depending on the chemical vapor deposition technology. Photolithography and reactive-ion etching were used to produce the waveguide structures. The waveguide structure width varied from 1 to 5 μm with a pitch of 500 nm. A cladding layer of silicon oxide was deposited on the structure surface. This paper describes the study of losses at a wavelength of 1.55 μm in the waveguide structures made by both chemical vapor deposition methods. A comparison of the deposition methods demonstrated that the developed method of plasma-enhanced chemical vapor deposition provided a significant reduction in the losses in structures compared to the low-pressure chemical vapor deposition.
Tags: lpcvd microwave photonics pecvd photonic integrated circuits silicon nitride нитрид кремния радиофотоника фотонные интегральные схемы
Subscribe to the journal Photonics Russia to read the full article.
The article is devoted to the production technology of optical micro-waveguides made of silicon nitride. The silicon substrates with a silicon oxide sublayer were used to produce the waveguide structures. The silicon nitride films were deposited on the silicon oxide surface by plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition. The silicon nitride film thickness varied from 710 to 730 nm, depending on the chemical vapor deposition technology. Photolithography and reactive-ion etching were used to produce the waveguide structures. The waveguide structure width varied from 1 to 5 μm with a pitch of 500 nm. A cladding layer of silicon oxide was deposited on the structure surface. This paper describes the study of losses at a wavelength of 1.55 μm in the waveguide structures made by both chemical vapor deposition methods. A comparison of the deposition methods demonstrated that the developed method of plasma-enhanced chemical vapor deposition provided a significant reduction in the losses in structures compared to the low-pressure chemical vapor deposition.
Tags: lpcvd microwave photonics pecvd photonic integrated circuits silicon nitride нитрид кремния радиофотоника фотонные интегральные схемы
Subscribe to the journal Photonics Russia to read the full article.
Readers feedback
